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IPU13N03LA G Image

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Mfr. #:
IPU13N03LA G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 25 V 30A (Tc) 46W (Tc) P-TO251-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 30 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 12.8 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id 2 V @ 20 μA
Gate Charge?(Qg) (max) at Vgs 8.3 nC @ 5 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 1043 pF @ 15 V
FET Function -
Power Dissipation (max) 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package P-TO251-3-1
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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