LOGO
LOGO
SPP16N50C3HKSA1 Image

img for reference only

Mfr. #:
SPP16N50C3HKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 560 V 16A (Tc) 160W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 560 V
Current at 25°C - Continuous Drain (Id) 16 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 280 mOhm @ 10 A, 10 V
Vgs(th) (max) at Id 3.9 V @ 675 μA
Gate Charge?(Qg) (max) at Vgs 66 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 1600 pF @ 25 V
FET Function -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package/Case TO-220-3
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd