SPD08N50C3BTMA1 Infineon | Infineon agency

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Mfr. #：

SPD08N50C3BTMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 560 V 7.6A (Tc) 83W (Tc) PG-TO252-3-11

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Packaging	Tape and Reel (TR)
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	560 V
Current at 25°C - Continuous Drain (Id)	7.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	600 mOhm @ 4.6A, 10V
Vgs(th) (max) at Id	3.9V @ 350μA
Gate Charge?(Qg) (max) at Vgs	32 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	750 pF @ 25 V
FET Function	-
Power Dissipation (max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package/Case	TO-252-3, DPak (2-Lead Tab), SC-63

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