BUZ80A Infineon | Infineon agency

img for reference only

Mfr. #：

BUZ80A

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 800 V 3.6A (Tc) 100W (Tc) TO-220AB

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Package	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	800 V
Current at 25°C - Continuous Drain (Id)	3.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	3 ohms @ 2A, 10V
Vgs(th) (max) at Id	4V @ 1mA
Vgs (max)	±20V
Input Capacitance (Ciss) (max) at Vds	1350 pF @ 25 V
FET Function	-
Power dissipation (max)	100W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier Device package	TO-220AB
Package/case	TO-220-3

BFP740H6327XTSA1

Infineon NPN bipolar transistor, SOT-343 package, maximum DC collector current 30 mA, maximum collector-emitter voltage 4 V, surface mount, maximum power dissipation 160 mW, 4-pin
BCV 62A E6327

Infineon PNP transistor, SOT-143 package, maximum DC collector current 100 mA, maximum collector-emitter voltage 30 V, surface mount, maximum power dissipation 300 mW, 4-pin
BCR142WH6327XTSA1

Infineon NPN Kit, SOT-323 (SC-70) package, maximum DC collector current 100 mA, maximum collector-emitter voltage 50 V, surface mount, maximum power dissipation 250 mW, 3-pin
BCR162E6327HTSA1

Infineon PNP Kit, 100 mA, Vce=50 V, 4.7 kΩ, Resistance Ratio: 1, 3-pin SOT-23 package
BFP740ESDH6327XTSA1

Infineon NPN bipolar transistor, SOT-343 package, maximum DC collector current 45 mA, maximum collector-emitter voltage 4.9 V, surface mount, maximum power dissipation 160 mW, 4-pin
BCM856SH6327XTSA1

Infineon PNP transistor, SOT-363 (SC-88) package, maximum DC collector current 100 mA, maximum collector-emitter voltage 65 V, surface mount, maximum power dissipation 250 mW, 6-pin
BC817K40E6327HTSA1

Infineon NPN transistor, SOT-23 package, maximum DC collector current 500 mA, maximum collector-emitter voltage 45 V, surface mount, maximum power dissipation 500 mW, 3-pin
BFP640FH6327XTSA1

NPN RF Bipolar Transistor, TSFP Package, Max DC Collector Current 50 mA, Max Collector-Emitter Voltage 4 V, Surface Mount, 4-Pin