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IRFBA1405P Image

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Mfr. #:
IRFBA1405P
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 55 V 174A (Tc) 330W (Tc) SUPER-220? (TO-273AA)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 174A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 5 milliohms @ 101A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 260 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 5480 pF @ 25 V
FET Function -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-220? (TO-273AA)
Package / Case TO-273AA
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