IRF3709L Infineon | Infineon agency

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Mfr. #：

IRF3709L

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 30 V 90A (Tc) 3.1W (Ta), 120W (Tc) TO-262

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	90A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	9 milliohms @ 15A, 10V
Vgs(th) (max) at Id	3V @ 250μA
Gate Charge?(Qg) (max) at Vgs	41 nC @ 5 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	2672 pF @ 16 V
FET Function	-
Power Dissipation (max)	3.1W (Ta), 120W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

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