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IRF5806 Image

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Mfr. #:
IRF5806
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 20 V 4A (Ta) 2W (Ta) Micro6? (TSOP-6)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 20 V
Current at 25°C - Continuous Drain (Id) 4A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 2.5V, 4.5V
On-Resistance (max) at Id, Vgs 86 mOhm @ 4A, 4.5V
Vgs(th) (max) at Id 1.2V @ 250μA
Gate Charge?(Qg) (max) at Vgs 11.4 nC @ 4.5 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 594 pF @ 15 V
FET Function -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package Micro6? (TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6
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