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IRF5805 Image

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Mfr. #:
IRF5805
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 30 V 3.8A (Ta) 2W (Ta) Micro6? (TSOP-6)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 3.8 A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 98 mOhm @ 3.8 A, 10 V
Vgs(th) (max) at Id 2.5 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 17 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 511 pF @ 25 V
FET Function -
Power Dissipation (Max) 2W (Ta)
Mounting Type Surface Mount
Supplier Device Package Micro6? (TSOP-6)
Package/Case SOT-23-6 Thin, TSOT-23-6
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