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IGB20N65S5ATMA1 Image

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Mfr. #:
IGB20N65S5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon 650 V 20 A IGBT, 3-pin, Through Hole, N-channel
Datasheet:
In Stock:
5
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 20 A
Maximum collector-emitter voltage 650 V
Maximum gate-emitter voltage ±20 V, ±30 V
Number of transistors 1
Maximum power dissipation 125 W
Package type TO-263
Configuration -
Mounting type Through hole
Channel type N
Number of pins 3
Switching speed -
Transistor configuration -
Dimensions -
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