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IPD079N06L3GATMA1 Image

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Mfr. #:
IPD079N06L3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon N-channel enhancement mode MOS tube, Vds=60 V, 50 A, TO-252, through hole mounting, 3 pins
Datasheet:
In Stock:
5
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 50 A
Maximum drain-source voltage 60 V
Package type TO-252
Maximum drain-source resistance -
Series -
Mounting type Through hole
Number of pins 3
Maximum gate-source voltage -
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage -
Maximum power dissipation -
Transistor configuration -
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