LOGO
LOGO
IRF3708 Image

img for reference only

Mfr. #:
IRF3708
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 30 V 62A (Tc) 87W (Tc) TO-220AB
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 62A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 2.8V, 10V
On-Resistance (max) at Id, Vgs 12 mOhm @ 15A, 10V
Vgs(th) (max) at Id 2V @ 250μA
Gate Charge?(Qg) (max) at Vgs 24 nC @ 4.5 V
Vgs (max) ±12V
Various Vds Input Capacitance (Ciss) (Max) 2417 pF @ 15 V
FET Function -
Power Dissipation (Max) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package/Case TO-220-3
Related models
  • IRFB4127PBF

    Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB

  • IRFB4137PBF

    Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB

  • IRFB4227PBF

    Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB

  • IRFB4228PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

  • IRFB4229PBF

    Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB

  • IRFB4310PBF

    Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB

  • IRFB4310ZPBF

    Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB

  • IRFB4321PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd