LOGO
LOGO
IRG7PH35UD1MPBF Image

img for reference only

Mfr. #:
IRG7PH35UD1MPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type -
Collector-emitter breakdown voltage (Vces) 1.2kV
Collector current (Ic) 50A
Power (Pd) 179W
Gate threshold voltage (Vge(th)@Ic) 2.2V@15V,20A
Gate charge (Qg@Ic,Vge) 130nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) -
Turn-off delay time (Td(off)) 160ns
Conduction loss (Eon) -
Turn-off loss (Eoff) 0.62mJ
Operating temperature -55℃~ 150℃@(Tj)
Related models
  • IPI65R310CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3

  • IPI65R380C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3

  • IPI65R420CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3

  • IPI65R600C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3

  • IPI70R950CEXKSA1

    Transistor: N-MOSFET; unipolar; 700V; 4.7A; 68W; PG-TO262-3

  • IPI80N06S407AKSA2

    Transistor: N-MOSFET; OptiMOS? -T2; unipolar; 60V; 58A; Idm: 320A

  • IPP60R099P6XKSA1

    Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3

  • IPP60R099P7

    Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd