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IGB50N65S5ATMA1 Image

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Mfr. #:
IGB50N65S5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type FS (field stop)
Collector-emitter breakdown voltage (Vces) 650V
Collector current (Ic) 80A
Power (Pd) 270W
Gate threshold voltage (Vge(th)@Ic) 1.7V@15V,50A
Gate charge (Qg@Ic,Vge) 120nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) 20ns
Turn-off delay time (Td(off)) 139ns
Conduction loss (Eon) 1.23mJ
Turn-off loss (Eoff) 0.74mJ
Operating temperature -40℃~ 175℃@(Tj)
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