LOGO
LOGO
PTFA212401E V4 R250 Image

img for reference only

Mfr. #:
PTFA212401E V4 R250
Mfr.:
Infineon Technologies
Batch:
23+
Description:
RF Mosfet LDMOS 30 V 1.6 A 2.14GHz 15.8dB 50W H-36260-2
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
Transistor Type LDMOS
Frequency 2.14GHz
Gain 15.8dB
Voltage - Test 30 V
Rated Current (Amperes) 10μA
Noise Figure -
Current - Test 1.6 A
Power - Output 50W
Voltage - Rated 65 ​​V
Package/Case H-36260-2
Supplier Device Package H-36260-2
Related models
  • IKN06N60RC2ATMA1

    IGBT 600 V 8 A 7.2 W Surface mount type PG-SOT223-3

  • IKD15N60RC2ATMA1

    IGBT Trench Field Stop 600 V 28 A 115.4 W Surface Mount PG-TO252-3

  • IHW30N65R6XKSA1

    IGBT 650 V 65 A 163 W Through hole PG-TO247-3

  • IKWH20N65WR6XKSA1

    IGBT Trench Field Stop 650 V 55 A 136 W Through Hole PG-TO247-3-32

  • IKWH30N65WR6XKSA1

    IGBT Trench Field Stop 650 V 67 A 136 W Through Hole PG-TO247-3-32

  • BC817K16WH6327XTSA1

    Transistor - Bipolar (BJT) - Single NPN 45 V 500 mA 170MHz 250 mW Surface Mount PG-SOT323

  • CY22801KFXCT

    Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator IC 200MHz 1 8-SOIC (0.154", 3.90mm Width)

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd