LOGO
LOGO
IRF9910TRPBF-1 Image

img for reference only

Mfr. #:
IRF9910TRPBF-1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET - Array 2 N-Channel (Dual) 20V 10A (Ta), 12A (Ta) 2W (Ta) Surface Mount 8-SOIC
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
series hexFet?
Packaging roll (TR)
FET 2 n-channel (dual)
FET function
} }} 20V
25 ° C The current-continuous drain (ID) 10A (TA), 12A (TA)
Different IDs and VGS Drive resistance (maximum value) 13.4 millimeters@ 10A, 10V, 9.3 murcer@ 12A, 10V
Different VGS Caval charges (QG) (maximum value) 11nc @ 4.5V, 23nc @ 4.5V
Different VDS Input capacitance (CISS) (maximum value) 900pf @ 10V, 1860pf @ 10V
power-maximum value 2W (ta)
working temperature -55 ° C ~ 150 ° C (tj)
Supplier's device packaging 8-Soic
Related models
  • IPB60R040C7ATMA1

    Surface mount N channel 650 V 50A (Tc) 227W (Tc) PG-TO263-3

  • IPB64N25S320ATMA1

    Surface mount N channel 250 V 64A (Tc) 300W (Tc) PG-TO263-3-2

  • IPP023N08N5AKSA1

    Through hole N channel 80 V 120A (Tc) 300W (Tc) PG-TO220-3

  • AUIRF8739L2TR

    Surface Mount N-Channel 40 V 57A (Ta), 545A (Tc) 3.8W (Ta), 340W (Tc) DirectFET? Equidistant L8

  • IPW60R160P6FKSA1

    Through hole N channel 600 V 23.8A (Tc) 176W (Tc) PG-TO247-3

  • BSM30GP60BOSA1

    IGBT Module Full Bridge 600 V 50 A 180 W Base Mount Module

  • BSM35GB120DN2HOSA1

    IGBT Module Half Bridge 1200 V 50 A 280 W Base Mount Module

  • IRFHM8326TRPBF

    Surface mount N-channel 30 V 19A (Ta) 2.8W (Ta), 37W (Tc)

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd