IPTG063N15NM5ATMA1 Infineon | Infineon agency

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Mfr. #：

IPTG063N15NM5ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 150 V 16.2A (Ta), 122A (Tc) 3.8W (Ta), 214W (Tc) PG-HSOG-8

Datasheet:

In Stock:

1786

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS? 5
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	150 V
Current at 25°C - Continuous Drain (Id)	16.2A (Ta), 122A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	8V, 10V
On-Resistance (max) at Id, Vgs	6.3 mOhm @ 50A, 10V
Vgs(th) (max) at Id	4.6V @ 163μA
Gate Charge?(Qg) (max) at Vgs	63 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	4800 pF @ 75 V
FET function	-
Power dissipation (max)	3.8W (Ta), 214W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-HSOG-8
Package/case	8-PowerSFN

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