IPP120N10S403AKSA1 Infineon | Infineon agency

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Mfr. #：

IPP120N10S403AKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 100 V 120A (Tc) 250W (Tc) PG-TO220-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS?
Package	Dip
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	120A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	3.9 mOhm @ 100A, 10V
Vgs(th) (max) at Id	3.5V @ 180μA
Gate Charge?(Qg) (max) at Vgs	140 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	10120 pF @ 25 V
FET function	-
Power dissipation (max)	250W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO220-3-1
Package/case	TO-220-3

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IRF9Z24NLPBF

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IRL8113SPBF

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