AUIRF7342Q Infineon | Infineon agency

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Mfr. #：

AUIRF7342Q

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET - Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SOIC

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	2 P-channel (dual)
FET Function	Logic level gate
Drain-source voltage (Vdss)	55V
Current at 25°C - Continuous Drain (Id)	3.4A
On-resistance (max) at different Id, Vgs	105 milliohms @ 3.4A, 10V
Vgs(th) (max) at different Id	3V @ 250μA
Gate charge?(Qg) (max) at different Vgs	38nC @ 10V
Input capacitance (Ciss) (max) at different Vds	690pF @ 25V
Power - Maximum	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package/Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

IRL3302PBF

Through hole N channel 20 V 39A (Tc) 57W (Tc) TO-220AB
IRFZ34NLPBF

Through hole N channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) TO-262
IRFZ44ZSPBF

Surface Mount N Channel 55 V 51A (Tc) 80W (Tc) D2PAK
IRL8113PBF

Through hole N channel 30 V 105A (Tc) 110W (Tc) TO-220AB
IRFZ46ZSPBF

Surface Mount N Channel 55 V 51A (Tc) 82W (Tc) D2PAK
IRLIZ24NPBF

Through hole N channel 55 V 14A (Tc) 26W (Tc) TO-220AB whole package
IRF9Z24NLPBF

Through hole P channel 55 V 12A (Tc) 3.8W (Ta), 45W (Tc) TO-262
IRL8113SPBF

Surface Mount N Channel 30 V 105A (Tc) 110W (Tc) D2PAK