LOGO
LOGO
IPP65R060CFD7XKSA1 Image

img for reference only

Mfr. #:
IPP65R060CFD7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET HIGH POWER_NEW Information about Infineon Technologies infineon 650v cfd7 sj power mosfets
Datasheet:
In Stock:
468
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 650 V
Id-Continuous Drain Current 36 A
Rds On-Drain-Source On-Resistance 60 mOhms
Vgs - Gate-Source Voltage - 10 V, 10 V
Vgs th-Gate-Source Threshold Voltage 4.5 V
Qg-Gate Charge 68 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 171 W
Channel Mode Enhancement
Qualification
Trade Name
Package Tube
Related models
  • IRG4BC15MDPBF

    IGBT 600 V 14 A 49 W Through hole TO-220AB

  • BCV62CE6327HTSA1

    Transistor - Bipolar (BJT) - Array 2 PNP (Dual) 30V 100mA 250MHz 300mW Surface Mount PG-SOT-143-3D

  • BCM856SH6327XTSA1

    Transistor - Bipolar (BJT) - Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO

  • IRF7470TRPBF

    Surface Mount N Channel 40 V 10A (Ta) 2.5W (Ta) 8-SO

  • IPD122N10N3GATMA1

    Surface mount N channel 100 V 59A (Tc) 94W (Tc) PG-TO252-3

  • IRGIB7B60KDPBF

    IGBT NPT 600 V 12 A 39 W Through Hole TO-220AB Full Pack

  • IRGS6B60KDPBF

    IGBT NPT 600 V 13 A 90 W Surface Mount D2PAK

  • IRG4BC20MDPBF

    IGBT 600 V 18 A 60 W Through hole TO-220AB

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd