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IPD50N06S4L08ATMA2 Image

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Mfr. #:
IPD50N06S4L08ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 50A
Power (Pd) 71W
On-resistance (RDS(on)@Vgs,Id) 7.8mΩ@50A,10V
Threshold Voltage (Vgs(th)@Id) 2.2V@35uA
Gate Charge (Qg@Vgs) 64nC@10V
Input Capacitance (Ciss@Vds) 4.78nF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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