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IPD85P04P4L06ATMA1 Image

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Mfr. #:
IPD85P04P4L06ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 40 V 85A (Tc) 88W (Tc) PG-TO252-3-313
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 85A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 6.4 milliohms @ 85A, 10V
Vgs(th) (max) at Id 2.2V @ 150μA
Gate Charge?(Qg) (max) at Vgs 104 nC @ 10 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 6580 pF @ 25 V
FET function -
Power dissipation (max) 88W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3-313
Package/case TO-252-3, DPak (2-lead tab), SC-63
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