LOGO
LOGO
IPTG029N13NM6ATMA1 Image

img for reference only

Mfr. #:
IPTG029N13NM6ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET TRENCH >=100V
Datasheet:
In Stock:
1775
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case PG-HSOG-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 135 V
Id-Continuous Drain Current 212 A
Rds On-Drain-Source On-Resistance 2.9 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 3.5 V
Qg-Gate Charge 104 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 294 W
Channel Mode Enhancement
Qualification
Trade Name
Packaging Reel, Cut Tape
Related models
  • IR2112-1

    High Side or Low Side Gate Driver IC Non-Inverting 14-PDIP

  • FF2400RB12IP7PBPSA1

    IGBT Modules 2 Standalone 750 V 2400 A

  • FF1500R17IP5RBPSA1

    IGBT Module Trench Field Stop 2 Standalone 1700 V 1500 A 20 mW Chassis Mount Module

  • IMZA65R039M1HXKSA1

    Through hole N channel 650 V 50A (Tc) 176W (Tc) PG-TO247-4-3

  • IR2112-2

    High Side or Low Side Gate Driver IC Non-Inverting 16-PDIP

  • IR2113-1

    Half-bridge Gate Driver IC Non-Inverting 14-PDIP

  • IR2113-2

    Half-bridge Gate Driver IC Non-Inverting 16-PDIP

  • IR2152

    Half-bridge Gate Driver IC RC Input Circuit 8-PDIP

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd