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IKB30N65EH5ATMA1 Image

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Mfr. #:
IKB30N65EH5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
product catalog igbt tube/module
igbt type fs (field cutoff)
collector-emitter breakdown voltage (vces) 650v
collector current (ic) 55a
power (pd) 188w
gate threshold voltage (vge(th)@ic) 2.1v@15v,30a
input capacitance (cies@vce) -
turn-on delay time (td(on)) 24ns
turn-off delay time (td(off)) 159ns
conduction loss (eon) 0.87mj
off loss (eoff) 0.3mj
reverse recovery time (trr) 75ns
operating temperature -40℃~ 175℃@(tj)
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