IGT60R070D1ATMA4 Infineon | Infineon agency

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Mfr. #：

IGT60R070D1ATMA4

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 600 V 31A (Tc) 125W (Tc) PG-HSOF-8-3

Datasheet:

In Stock:

2911

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolGaN?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	31A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	-
On-Resistance (Max) at Different Id, Vgs	-
Vgs(th) (Max) at Different Id	1,6V @ 2,6mA
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) at Different Vds	380 pF @ 400 V
FET Function	-
Power dissipation (max)	125W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-HSOF-8-3
Package/case	8-PowerSFN

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