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IPW65R145CFD7AXKSA1 Image

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Mfr. #:
IPW65R145CFD7AXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 17A (Tc) 98W (Tc) PG-TO247-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 17 A (Tc)
On-Resistance (max) at Id, Vgs 145 mOhm @ 8.5 A, 10 V
Vgs(th) (max) at Id 4.5 V @ 420 μA
Gate Charge?(Qg) (max) at Vgs 36 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 1694 pF @ 400 V
FET Function -
Power Dissipation (Max) 98W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package/Case TO-247-3
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