ISC015N04NM5ATMA1 Infineon | Infineon agency

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Mfr. #：

ISC015N04NM5ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 40 V 33A (Ta), 206A (Tc) 3W (Ta), 115W (Tc) PG-TDSON-8 FL

Datasheet:

In Stock:

519

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?-5
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	33A (Ta), 206A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	7V, 10V
On-Resistance (max) at Id, Vgs	1.5 milliohms @ 50A, 10V
Vgs(th) (max) at Id	3.4V @ 60μA
Gate Charge?(Qg) (max) at Vgs	67 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	4800 pF @ 20 V
FET function	-
Power dissipation (max)	3W (Ta), 115W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TDSON-8 FL
Package/case	8-PowerTDFN

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