LOGO
LOGO
BSM100GD120DN2BDLA1 Image

img for reference only

Mfr. #:
BSM100GD120DN2BDLA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module Full Bridge 1200 V 150 A 680 W Base Mount Module
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Tray
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (max) 1200 V
Current - Collector (Ic) (max) 150 A
Power - max 680 W
Vce(on) (max) 3V @ 15V, 100A
Current - Collector Cutoff (max) 2 mA
Input Capacitance (Cies) 6.5 nF @ 25 V
Input Standard
NTC Thermistor None
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package Module
Related models
  • IQE006NE2LM5ATMA1

    Power MOSFET, N-Channel, 25 V, 298 A, 0.0005 ohm, TSON, Surface Mount

  • IPD050N10N5ATMA1

    Power MOSFET, N-Channel, 100 V, 80 A, 0.0043 ohm, TO-252 (DPAK), Surface Mount

  • IMZA65R072M1HXKSA1

    Silicon Carbide MOSFET, SiC Trench, Single, N-Channel, 28 A, 650 V, 0.072 ohm, TO-247

  • IPAN60R360PFD7SXKSA1

    Power MOSFET, N-Channel, 600 V, 10 A, 0.303 ohm, TO-220FP, Through Hole

  • IMZA65R107M1HXKSA1

    SiC MOSFET, Single, N-Channel, 20 A, 650 V, 0.107 ohm, TO-247

  • IPP039N10N5AKSA1

    Power MOSFET, N-channel, 100 V, 100 A, 0.0032 ohm, TO-220, Through Hole

  • IPD60R360CFD7ATMA1

    Power MOSFET, N-Channel, 600 V, 7 A, 0.295 ohm, TO-252 (DPAK), Surface Mount

  • IPC100N04S5L1R5ATMA1

    Power MOSFET, N-Channel, 40 V, 100 A, 0.0012 ohm, TDSON, SMT

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd