IPW60R055CFD7XKSA1 Infineon | Infineon agency

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Mfr. #：

IPW60R055CFD7XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Tongkou N channel 600 V 38A (TC) 178W (TC) PG-TO247-3

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	38 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	55 mOhm @ 18 A, 10 V
Vgs(th) (max) at Id	4.5 V @ 900 μA
Gate Charge?(Qg) (max) at Vgs	79 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	3194 pF @ 400 V
FET Function	-
Power Dissipation (Max)	178W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package/Case	TO-247-3

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