IRFB4229PBF Infineon | Infineon agency

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Mfr. #：

IRFB4229PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 250 V 46A (Tc) 330W (Tc) TO-220AB

Datasheet:

In Stock:

792

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	250 V
Current at 25°C - Continuous Drain (Id)	46A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	46 mOhm @ 26A, 10V
Vgs(th) (max) at Id	5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	110 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (Max)	4560 pF @ 25 V
FET Function	-
Power Dissipation (Max)	330W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

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