LOGO
LOGO
IPB180N04S400ATMA1 Image

img for reference only

Mfr. #:
IPB180N04S400ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 40 V 180A (Tc) 300W (Tc) PG-TO263-7-3
Datasheet:
In Stock:
3969
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 180 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 0.98 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id 4 V @ 230 μA
Gate Charge?(Qg) (max) at Vgs 286 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 22880 pF @ 25 V
FET Function -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package/Case TO-263-7, D2Pak (6-Lead Tab)
Related models
  • IRFIZ34NPBF

    Single N-Channel 100 V 37 W 34 nC Power Mosfet Flange Mount - TO-220FPAK

  • IRFI3205PBF

    Single N-Channel 55 V 63 W 170 nC Power Mosfet Flange Mount - TO-220FPAK

  • IRF5305PBF

    Single P-Channel 55 V 110 W 63 nC Hexfet Power Mosfet Flange Mount - TO-220AB

  • BCR191E6327HTSA1

    PNP Silicon Digital Transistor, SOT23

  • IPN50R3K0CEATMA1

    Single N-Channel 550 V 3 Ohm 4.3 nC CoolMOS? Power MOSFET - SOT-223

  • IPT015N10N5ATMA1

    100V, 300A, 1.5MOHM, HSOF

  • IRF5803TRPBF

    Single P-Channel 40 V 2 W 25 nC Hexfet Power Mosfet Surface Mount - TSOP-6

  • IRFR120ZTRPBF

    MOSFET 100 V 8.7A 190 mOhm 6.9 nC Qg D-Pak

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd