IPD50P04P4L11ATMA2 Infineon | Infineon agency

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Mfr. #：

IPD50P04P4L11ATMA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount type P channel 40 V 50A (Tc) 58W (Tc) PG-TO252-3-313

Datasheet:

In Stock:

5269

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?-P2
Packaging	Tape and Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	50 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	10.6 mOhm @ 50 A, 10 V
Vgs(th) (max) at Id	2.2 V @ 85 μA
Gate Charge?(Qg) (max) at Vgs	59 nC @ 10 V
Vgs (max)	5V, -16V
Input capacitance (Ciss) (max) at different Vds	3900 pF @ 25 V
FET function	-
Power dissipation (max)	58W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3-313
Package/case	TO-252-3, DPak (2-lead tab), SC-63

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