LOGO
LOGO
FD400R33KF2CKNOSA1 Image

img for reference only

Mfr. #:
FD400R33KF2CKNOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module Single Chopper 3300 V 660 A 4800 W Base Mount Module
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Bulk
IGBT Type -
Configuration Single Chopper
Voltage - Collector Emitter Breakdown (max) 3300 V
Current - Collector (Ic) (max) 660 A
Power - max 4800 W
Vce(on) (max) 4.25V @ 15V, 400A
Current - Collector Cutoff (max) 5 mA
Vce(on) (max) 50 nF @ 25 V
Input Standard
NTC Thermistor None
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package Module
Related models
  • IPI65R310CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3

  • IPI65R380C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3

  • IPI65R420CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3

  • IPI65R600C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3

  • IPI70R950CEXKSA1

    Transistor: N-MOSFET; unipolar; 700V; 4.7A; 68W; PG-TO262-3

  • IPI80N06S407AKSA2

    Transistor: N-MOSFET; OptiMOS? -T2; unipolar; 60V; 58A; Idm: 320A

  • IPP60R099P6XKSA1

    Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3

  • IPP60R099P7

    Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd