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IRF2805STRLPBF Image

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Mfr. #:
IRF2805STRLPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 55 V 135A (Tc) 200W (Tc) D2PAK
Datasheet:
In Stock:
4891
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Tape and Reel (TR)
Not for New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 135A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 4.7 mOhm @ 104A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 230 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 5110 pF @ 25 V
FET function -
Power dissipation (max) 200W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package D2PAK
Package/case TO-263-3, D2Pak (2-lead tab), TO-263AB
IRF2805
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