LOGO
LOGO
BC857SH6327XTSA1 Image

img for reference only

Mfr. #:
BC857SH6327XTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Array 2 PNP (Dual) 45V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO
Datasheet:
In Stock:
67948
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
-
Tape and Reel (TR)
Last Sale
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (max) 100mA
Voltage - Collector Emitter Breakdown (max) 45V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 650mV @ 5mA, 100mA
Current - Collector Cutoff (max) 15nA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min) 200 @ 2mA, 5V
Power - max 250mW
Frequency - Transition 250MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package/Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO
BC857
Related models
  • IRG4BC15MDPBF

    IGBT 600 V 14 A 49 W Through hole TO-220AB

  • BCV62CE6327HTSA1

    Transistor - Bipolar (BJT) - Array 2 PNP (Dual) 30V 100mA 250MHz 300mW Surface Mount PG-SOT-143-3D

  • BCM856SH6327XTSA1

    Transistor - Bipolar (BJT) - Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO

  • IRF7470TRPBF

    Surface Mount N Channel 40 V 10A (Ta) 2.5W (Ta) 8-SO

  • IPD122N10N3GATMA1

    Surface mount N channel 100 V 59A (Tc) 94W (Tc) PG-TO252-3

  • IRGIB7B60KDPBF

    IGBT NPT 600 V 12 A 39 W Through Hole TO-220AB Full Pack

  • IRGS6B60KDPBF

    IGBT NPT 600 V 13 A 90 W Surface Mount D2PAK

  • IRG4BC20MDPBF

    IGBT 600 V 18 A 60 W Through hole TO-220AB

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd