IKA15N65F5XKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IKA15N65F5XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT 650 V 14 A 33.3 W Through hole PG-TO220-FP

Datasheet:

In Stock:

564

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	TrenchStop?
Package	Tube
IGBT Type	-
Voltage - Collector-Emitter Breakdown (max)	650 V
Current - Collector (Ic) (max)	14 A
Current - Collector Pulse (Icm)	45 A
Vce(on) (max) at Vge, Ic	2.1V @ 15V, 15A
Power - max	33.3 W
Switching Energy	130μJ (on), 40μJ (off)
Input Type	Standard
Gate Charge	38 nC
Td (on/off) at 25°C	17ns/150ns
Test Conditions	400V, 7.5A, 39 Ohm, 15V
Reverse recovery time (trr)	50 ns
Operating temperature	-40°C ~ 175°C (TJ)
Mounting type	Through hole
Package/case	TO-220-3 Full package
Supplier device package	PG-TO220-FP

IQE006NE2LM5ATMA1

Power MOSFET, N-Channel, 25 V, 298 A, 0.0005 ohm, TSON, Surface Mount
IPD050N10N5ATMA1

Power MOSFET, N-Channel, 100 V, 80 A, 0.0043 ohm, TO-252 (DPAK), Surface Mount
IMZA65R072M1HXKSA1

Silicon Carbide MOSFET, SiC Trench, Single, N-Channel, 28 A, 650 V, 0.072 ohm, TO-247
IPAN60R360PFD7SXKSA1

Power MOSFET, N-Channel, 600 V, 10 A, 0.303 ohm, TO-220FP, Through Hole
IMZA65R107M1HXKSA1

SiC MOSFET, Single, N-Channel, 20 A, 650 V, 0.107 ohm, TO-247
IPP039N10N5AKSA1

Power MOSFET, N-channel, 100 V, 100 A, 0.0032 ohm, TO-220, Through Hole
IPD60R360CFD7ATMA1

Power MOSFET, N-Channel, 600 V, 7 A, 0.295 ohm, TO-252 (DPAK), Surface Mount
IPC100N04S5L1R5ATMA1

Power MOSFET, N-Channel, 40 V, 100 A, 0.0012 ohm, TDSON, SMT