AIGB40N65F5ATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

AIGB40N65F5ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT NPT 650 V 40 A Surface mount type PG-TO263-3-2

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape and Reel (TR)
IGBT Type	NPT
Voltage - Collector-Emitter Breakdown (max)	650 V
Current - Collector (Ic) (max)	40 A
Vce(on) (max) at Vge, Ic	-
Switching Energy	-
Input Type	Standard
Td (on/off) at 25°C	-
Test Conditions	-
Operating Temperature	-
Mounting Type	Surface Mount
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB
Supplier Device Package	PG-TO263-3-2

IMBG65R048M1HXTMA1

SiC MOSFET, Single, N-Channel, 45 A, 650 V, 0.048 ohm, TO-263
IPB90N06S404ATMA2

Power MOSFET, N-Channel, 60 V, 90 A, 0.003 ohm, TO-263 (D2PAK), Surface Mount
IPLK70R1K4P7ATMA1

Power MOSFET, N-Channel, 700 V, 3.9 A, 1.15 ohm, ThinPAK 5x6, Surface Mount
IPL65R200CFD7AUMA1

Power MOSFET, N-Channel, 650 V, 14 A, 0.162 ohm, VSON, Surface Mount
IPLK80R2K0P7ATMA1

Power MOSFET, N-Channel, 800 V, 3 A, 1.7 ohm, ThinPAK 5x6, Surface Mount
IQE008N03LM5ATMA1

Power MOSFET, N-channel, 30 V, 253 A, 650 μohm, TSON, Surface mount
IMW65R083M1HXKSA1

SiC MOSFET, Single, N-Channel, 24 A, 650 V, 0.083 ohm, TO-247
IQE065N10NM5ATMA1

Power MOSFET, N-Channel, 100 V, 85 A, 0.0057 ohm, TSON, Surface Mount