LOGO
LOGO
IMBG65R048M1HXTMA1 Image

img for reference only

Mfr. #:
IMBG65R048M1HXTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
SiC MOSFET, Single, N-Channel, 45 A, 650 V, 0.048 ohm, TO-263
Datasheet:
In Stock:
840
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N channel
Drain-source voltage, Vds 650V
Current, Id continuous 45A
Drain-source on-state resistance 0.048ohm
Related models
  • IPB60R040C7ATMA1

    Surface mount N channel 650 V 50A (Tc) 227W (Tc) PG-TO263-3

  • IPB64N25S320ATMA1

    Surface mount N channel 250 V 64A (Tc) 300W (Tc) PG-TO263-3-2

  • IPP023N08N5AKSA1

    Through hole N channel 80 V 120A (Tc) 300W (Tc) PG-TO220-3

  • AUIRF8739L2TR

    Surface Mount N-Channel 40 V 57A (Ta), 545A (Tc) 3.8W (Ta), 340W (Tc) DirectFET? Equidistant L8

  • IPW60R160P6FKSA1

    Through hole N channel 600 V 23.8A (Tc) 176W (Tc) PG-TO247-3

  • BSM30GP60BOSA1

    IGBT Module Full Bridge 600 V 50 A 180 W Base Mount Module

  • BSM35GB120DN2HOSA1

    IGBT Module Half Bridge 1200 V 50 A 280 W Base Mount Module

  • IRFHM8326TRPBF

    Surface mount N-channel 30 V 19A (Ta) 2.8W (Ta), 37W (Tc)

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd