FS25R12W1T4 Infineon | Infineon agency

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Mfr. #：

FS25R12W1T4

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT Module N-CH 1.2KV 45A

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Product	IGBT Silicon Modules
Configuration	6-Pack
Collector-Emitter Maximum Voltage VCEO	1200 V
Collector-Emitter Saturation Voltage	1.85 V
Continuous Collector Current at 25 C	45 A
Gate-Emitter Leakage Current	400 nA
Pd-Power Dissipation	205 W
Package/Case	EASY1B
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	150 C
Qualification
Package	Tray

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BCW 66KG E6433

Transistor - Bipolar (BJT) - Single NPN 45 V 800 mA 170MHz 500 mW Surface Mount PG-SOT23
BCR135E6433HTMA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23
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Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23
BCR166E6433HTMA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23
BCR169E6327HTSA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23