IPP65R190CFD7XKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPP65R190CFD7XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET HIGH POWER_NEW

Datasheet:

In Stock:

496

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	650 V
Id-Continuous Drain Current	12 A
Rds On-Drain-Source On-Resistance	190 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	4.5 V
Qg-Gate Charge	23 nC
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	63 W
Channel Mode	Enhancement
Qualification
Trade Name
Package	Tube

BSZ123N08NS3GATMA1

Surface mount N channel 80 V 10A (Ta), 40A (Tc) 2.1W (Ta), 66W (Tc) PG-TSDSON-8
BSC027N04LSGATMA1

Surface mount N channel 40 V 24A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) PG-TDSON-8-1
BSZ084N08NS5ATMA1

Surface mount N channel 80 V 40A (Tc) 63W (Tc) PG-TSDSON-8-FL
SPP06N80C3XKSA1

Through hole N channel 800 V 6A (Tc) 83W (Tc) PG-TO220-3
SPA06N80C3XKSA1

Through hole N channel 800 V 6A (Tc) 39W (Tc) PG-TO220-3-31
SPB80P06PGATMA1

Surface mount type P channel 60 V 80A (Tc) 340W (Tc) PG-TO263-3-2
IPD600N25N3GATMA1

Surface mount N channel 250 V 25A (Tc) 136W (Tc) PG-TO252-3
BSC077N12NS3GATMA1

Surface mount N channel 120 V 13.4A (Ta), 98A (Tc) 139W (Tc) PG-TDSON-8-1