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IMW65R027M1HXKSA1 Image

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Mfr. #:
IMW65R027M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET SILICON CARBIDE MOSFET
Datasheet:
In Stock:
266
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology SiC
Mounting Style Through Hole
Package/Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 650 V
Id-Continuous Drain Current 47 A
Rds On-Drain-Source On-Resistance 34 mOhms
Vgs - Gate-Source Voltage - 5 V, 23 V
Vgs th-Gate-Source Threshold Voltage 5.7 V
Qg-Gate Charge 62 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 189 W
Channel Mode Enhancement
Qualification
Trade Name CoolSiC
Package Tube
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