LOGO
LOGO
IPD50R950CEAUMA1 Image

img for reference only

Mfr. #:
IPD50R950CEAUMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET CONSUMER
Datasheet:
In Stock:
1480
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 500 V
Id-Continuous Drain Current 6.6 A
Rds On-Drain-Source On-Resistance 2.25 Ohms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 3 V
Qg-Gate Charge 10.5 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 53 W
Channel Mode Enhancement
Qualification
Trade Name CoolMOS
Package Reel, Cut Tape, MouseReel
Related models
  • IMBG65R048M1HXTMA1

    SiC MOSFET, Single, N-Channel, 45 A, 650 V, 0.048 ohm, TO-263

  • IPB90N06S404ATMA2

    Power MOSFET, N-Channel, 60 V, 90 A, 0.003 ohm, TO-263 (D2PAK), Surface Mount

  • IPLK70R1K4P7ATMA1

    Power MOSFET, N-Channel, 700 V, 3.9 A, 1.15 ohm, ThinPAK 5x6, Surface Mount

  • IPL65R200CFD7AUMA1

    Power MOSFET, N-Channel, 650 V, 14 A, 0.162 ohm, VSON, Surface Mount

  • IPLK80R2K0P7ATMA1

    Power MOSFET, N-Channel, 800 V, 3 A, 1.7 ohm, ThinPAK 5x6, Surface Mount

  • IQE008N03LM5ATMA1

    Power MOSFET, N-channel, 30 V, 253 A, 650 μohm, TSON, Surface mount

  • IMW65R083M1HXKSA1

    SiC MOSFET, Single, N-Channel, 24 A, 650 V, 0.083 ohm, TO-247

  • IQE065N10NM5ATMA1

    Power MOSFET, N-Channel, 100 V, 85 A, 0.0057 ohm, TSON, Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd