FS200R07A1E3BOSA1 Infineon | Infineon agency

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Mfr. #：

FS200R07A1E3BOSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Infineon IGBT Module N-channel, 3-phase bridge, 250 A, Vce=650 V, 25-pin HYBRID1 package

Datasheet:

In Stock:

999999

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Maximum continuous collector current	250 A
Maximum collector-emitter voltage	650 V
Maximum gate-emitter voltage	±20 V
Number of transistors	-
Maximum power dissipation	790 W
Package type	HYBRID1
Configuration	3-phase bridge
Mounting type	PCB (printed circuit board) mounting
Channel type	N
Number of pins	25
Switching speed	1MHz
Transistor configuration	3-phase
Dimensions	140 x 72 x 17mm

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