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FP25R12W2T4B11BOMA1 Image

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Mfr. #:
FP25R12W2T4B11BOMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT module, max 1200 V, max 39 A
Datasheet:
In Stock:
15
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 39 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage /-20V
Number of transistors 7
Maximum power dissipation 175 W
Package type -
Configuration -
Mounting type -
Channel type -
Number of pins -
Switching speed -
Transistor configuration -
Dimensions -
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