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FF900R12ME7B11BOSA1 Image

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Mfr. #:
FF900R12ME7B11BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT, max. 1200 V, max. 900 A
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 900 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage 20 V
Number of transistors -
Maximum power dissipation 20 mW
Package type Ag-econod
Configuration Dual
Mounting type -
Channel type N
Number of pins -
Switching speed -
Transistor configuration Common emitter
Size -
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