LOGO
LOGO
FP50R12N2T7PBPSA1 Image

img for reference only

Mfr. #:
FP50R12N2T7PBPSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT, max. 1200 V, max. 50 A
Datasheet:
In Stock:
1
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 50 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage 20 V
Number of transistors -
Maximum power dissipation 20 mW
Package type -
Configuration -
Mounting type -
Channel type -
Number of pins -
Switching speed -
Transistor configuration -
Dimensions -
Related models
  • IRFI4019HG-117P

    Infineon, HEXFET series, MOSFET, NMOS, TO-220 package

  • IPP023NE7N3GXKSA1

    Infineon, OptiMOS 3 series, MOSFET, NMOS, TO-220 package

  • IRFP4137PBF

    Infineon, HEXFET series, MOSFET, NMOS, TO-247AC package

  • IRF7205PBF

    Infineon, HEXFET series, MOSFET, PMOS, SOIC package

  • IRF4905LPBF

    Infineon, HEXFET series, MOSFET, PMOS, I2PAK (TO-262) package

  • IRLI540NPBF

    Infineon, HEXFET series, MOSFET, NMOS, TO-220 FP package

  • IRFP4368PBF

    Infineon, HEXFET series, MOSFET, NMOS, TO-247AC package

  • IRF7389TRPBF

    Infineon, HEXFET series, MOSFET, N/PMOS, SOIC package

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd