LOGO
LOGO
IPP110N20N3GXKSA1 Image

img for reference only

Mfr. #:
IPP110N20N3GXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, OptiMOS 3 series, MOSFET, NMOS, TO-220 package
Datasheet:
In Stock:
1
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 88 A
Maximum drain-source voltage 200 V
Package type TO-220
Maximum drain-source resistance 11 mΩ
Mounting type Through hole
Number of pins 3
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 4 V
Minimum gate threshold voltage 2 V
Maximum power dissipation 300 W
Transistor configuration Single
Category -
Related models
  • IR2112-1

    High Side or Low Side Gate Driver IC Non-Inverting 14-PDIP

  • FF2400RB12IP7PBPSA1

    IGBT Modules 2 Standalone 750 V 2400 A

  • FF1500R17IP5RBPSA1

    IGBT Module Trench Field Stop 2 Standalone 1700 V 1500 A 20 mW Chassis Mount Module

  • IMZA65R039M1HXKSA1

    Through hole N channel 650 V 50A (Tc) 176W (Tc) PG-TO247-4-3

  • IR2112-2

    High Side or Low Side Gate Driver IC Non-Inverting 16-PDIP

  • IR2113-1

    Half-bridge Gate Driver IC Non-Inverting 14-PDIP

  • IR2113-2

    Half-bridge Gate Driver IC Non-Inverting 16-PDIP

  • IR2152

    Half-bridge Gate Driver IC RC Input Circuit 8-PDIP

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd