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IRLB3813PBF Image

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Mfr. #:
IRLB3813PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, HEXFET series, MOSFET, NMOS, TO-220AB package
Datasheet:
In Stock:
2
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 260 A
Maximum drain-source voltage 30 V
Package type TO-220AB
Maximum drain-source resistance 2 mΩ
Mounting type Through hole
Number of pins 3
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 2.35 V
Minimum gate threshold voltage 1.35 V
Maximum power dissipation 230 W
Transistor configuration Single
Category -
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