IPD50R800CEATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPD50R800CEATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Infineon, CoolMOS CE series, MOSFET, NMOS, DPAK (TO-252) package

Datasheet:

In Stock:

999980

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Channel type	N
Maximum continuous drain current	5 A
Maximum drain-source voltage	550 V
Package type	DPAK (TO-252)
Maximum drain-source resistance	800 mΩ
Mounting type	Surface mount
Number of pins	3
Maximum gate-source voltage	-30 V, 30 V
Channel mode	Enhancement
Maximum gate threshold voltage	-
Minimum gate threshold voltage	-
Maximum power dissipation	40 W
Transistor configuration	Single
Category	-

BC 818K-25 E6327

Transistor - Bipolar (BJT) - Single NPN 25 V 500 mA 170MHz 500 mW Surface Mount PG-SOT23
BC847BWE6433HTMA1

Transistor - Bipolar (BJT) - Single NPN 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BCW 66KG E6433

Transistor - Bipolar (BJT) - Single NPN 45 V 800 mA 170MHz 500 mW Surface Mount PG-SOT23
BCR135E6433HTMA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23
BCR141E6433HTMA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 130 MHz 250 mW Surface Mount PG-SOT23
BCR162E6327HTSA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23
BCR166E6433HTMA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23
BCR169E6327HTSA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23