LOGO
LOGO
IRFHM7194TRPBF Image

img for reference only

Mfr. #:
IRFHM7194TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 100 V 9.3A (Ta), 34A (Tc) 2.8W (Ta), 37W (Tc) 8-PQFN (3.3x3.3), Power33
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series FASTIRFET?, HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 9.3A (Ta), 34A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 16.4 mOhm @ 20A, 10V
Vgs(th) (max) at Id 3.6V @ 50μA
Gate Charge?(Qg) (max) at Vgs 19 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 733 pF @ 50 V
FET function -
Power dissipation (max) 2.8W (Ta), 37W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package 8-PQFN (3.3x3.3), Power33
Package/case 8-PowerTDFN
Related models
  • IPI65R310CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3

  • IPI65R380C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3

  • IPI65R420CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3

  • IPI65R600C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3

  • IPI70R950CEXKSA1

    Transistor: N-MOSFET; unipolar; 700V; 4.7A; 68W; PG-TO262-3

  • IPI80N06S407AKSA2

    Transistor: N-MOSFET; OptiMOS? -T2; unipolar; 60V; 58A; Idm: 320A

  • IPP60R099P6XKSA1

    Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3

  • IPP60R099P7

    Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd