IPD60R750E6ATMA1 Infineon | Infineon agency

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Mfr. #：

IPD60R750E6ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 600 V 5.7A (Tc) 48W (Tc) PG-TO252-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? E6
Packaging	Tape and Reel (TR)
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	5.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	750 mOhm @ 2A, 10V
Vgs(th) (max) at Id	3.5V @ 170μA
Gate Charge?(Qg) (max) at Vgs	17.2 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	373 pF @ 100 V
FET function	-
Power dissipation (max)	48W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3
Package/case	TO-252-3, DPak (2-lead tab), SC-63

IRL3302PBF

Through hole N channel 20 V 39A (Tc) 57W (Tc) TO-220AB
IRFZ34NLPBF

Through hole N channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) TO-262
IRFZ44ZSPBF

Surface Mount N Channel 55 V 51A (Tc) 80W (Tc) D2PAK
IRL8113PBF

Through hole N channel 30 V 105A (Tc) 110W (Tc) TO-220AB
IRFZ46ZSPBF

Surface Mount N Channel 55 V 51A (Tc) 82W (Tc) D2PAK
IRLIZ24NPBF

Through hole N channel 55 V 14A (Tc) 26W (Tc) TO-220AB whole package
IRF9Z24NLPBF

Through hole P channel 55 V 12A (Tc) 3.8W (Ta), 45W (Tc) TO-262
IRL8113SPBF

Surface Mount N Channel 30 V 105A (Tc) 110W (Tc) D2PAK